Business Scope
Nanomaterials, semiconductor materials, high-purity materials, custom processing
Work Hours
Monday to Friday: 7AM - 7PM
Weekend: 10AM - 5PM
address
Zhengzhou, Henan, China
VGF Crucible
The VGF Crucible represents the cutting-edge of technology in the realm of semiconductor crystal growth, specifically for compounds such as Gallium Arsenide (GaAs) and Indium Phosphide (InP). As the predominant vessel for the Vertical Gradient Freeze (VGF) method of growing compound single crystals, this crucible is designed to facilitate the precision and performance required in advanced material science applications.
Product Features :
– High Purity: Achieving a purity level of 99.999%, the VGF Crucible ensures minimal contamination during the crystal growth process, critical for high-quality semiconductor fabrication.
– Non-wetting with Molten Metals: The specialized coating of the VGF Crucible prevents wetting with molten metals, allowing for clean operations and reducing the risks of contamination.
– Controllable Thermal Conductivity: This feature is instrumental in enhancing the crystal growth rate, effectively improving yield and ensuring superior quality of the resultant crystals.
– Excellent Thermal Shock Resistance: Designed to withstand rapid temperature changes, the VGF Crucible offers durability and reliability, minimizing the risk of cracking or damage during use.
– Easy to Clean and Reusable: The VGF Crucible’s surface composition enables effortless cleaning, making it a sustainable and cost-effective choice for research and production environments.
– Chemical Inertness: This crucible maintains its structural integrity even at high temperatures, showing no chemical reaction with acids or bases, thus ensuring safe handling and maintenance.
The VGF Crucible is essential for researchers and manufacturers dedicated to the precision and efficiency required in the production of high-quality compound semiconductors. Invest in the VGF Crucible for an optimized and reliable crystal growth experience that meets industrial standards.
specification:
| Application | Inside Diameter | Height | Thickness |
| VGF | 2″ | 10″ | 0.035″ |
| VGF | 3″ | 10″ | 0.035″ |
| VGF | 4″ | 8″ | 0.035″ |
| VGF | 5″ | 8″ | 0.04″ |
| VGF | 6″ | 7″ | 0.04″ |
| VGF | 8″ | 20″ | 0.08″ |
parameter:
| Properties | Units | Values |
| Density | g/cm3 | 1.95-2.20 |
| Tensile Strength | MPa | 112 |
| Bending Strength | MPa | 173 |
| Compression Strength | MPa | 154 |
| Young’s Modulus | GPa | 18 |
| Thermal Conductivity | W/m°C | “a” 60 “c” 2 |
| Specific Heat | J/g·℃ | 0.90（RT） |
| Resistivity | Ω.cm | 2×1015 |
| Dielectric Strength | D.C. volts/mm | 2×1015 |
| Dielectric Constant | “c” 3.07 | |
| Metal Impurity Content | ppm | <10 |
