Business Scope
Nanomaterials, semiconductor materials, high-purity materials, custom processing
Work Hours
Monday to Friday: 7AM - 7PM
Weekend: 10AM - 5PM
address
Zhengzhou, Henan, China
MBE Crucible
The MBE Crucible is an essential component in the molecular beam epitaxy (MBE) method, primarily utilized for the epitaxial growth of crystals. Acting as a source crucible in the MBE process, this product ensures high precision and quality in your crystal growth applications.
Product Features:
– High Purity: Achieve superior results with a purity level reaching 99.999%, minimizing contamination in your experiments.
– Low Outgassing Rate at Elevated Temperatures: The MBE Crucible exhibits an exceptionally low outgassing rate, even under high-temperature conditions, ensuring stability in your growth environment.
– Uniform Thickness and Consistent Heating: Constructed with an emphasis on precision, this crucible offers uniform thickness and excellent heating consistency, promoting uniform crystal growth.
– Exceptional Thermal Conductivity and Thermal Shock Resistance: Designed to handle the demands of high-temperature operations, our MBE Crucible boasts outstanding thermal conductivity, paired with excellent resistance to thermal shock.
– Easy to Clean and Reusable: The MBE Crucible is designed for simplicity in maintenance, allowing for easy cleaning and repeated use, making it a cost-effective choice for your experiments.
– Chemical Inertness: With its chemical inert properties, this crucible exhibits no reactions with acids or bases at high temperatures, ensuring reliability and prolonging its service life.
Elevate your MBE applications with our top-of-the-line MBE Crucible, engineered for excellence and reliability in crystal growth.
parameter:
| Properties | Units | Values |
| Density | g/cm3 | 1.95-2.20 |
| Tensile Strength | MPa | 112 |
| Bending Strength | MPa | 173 |
| Compression Strength | MPa | 154 |
| Young’s Modulus | GPa | 18 |
| Thermal Conductivity | W/m°C | “a” 60 “c” 2 |
| Specific Heat | J/g·℃ | 0.90（RT） |
| Resistivity | Ω.cm | 2×1015 |
| Dielectric Strength | D.C. volts/mm | 2×1015 |
| Dielectric Constant | “c” 3.07 | |
| Metal Impurity Content | ppm | <10 |
